Method for forming boron-doped semiconducting diamond films

摘要

Disclosed is a method for forming a diamond film on a substrate by vapor-phase synthesis using a reaction gas which contains B2H6 and O2 with a gas concentration ratio (volume %) of ([B2H6]/[O2])>/=1x10-4 in addition to a hydrocarbon gas in hydrogen. By this invention, it is possible to form p-type semiconducting diamond films having an excellent crystallinity and desired electric characteristics.