Method of manufacturing super channel TFT structure

摘要

An FET thin film transistor is formed with a channel formed of a Si/Si1-xGex/Si three layer sandwich which serves as the carrier transfer channel. The percentage of germanium is preferably less than 30% and should be less than about 50%. The TFT can be structured as top gate, bottom gate or twin gate structure. The Si/Si1-xGe/Si sandwich layer is processed in a continuous process under computer control.