发明名称 Semiconductor memory device having electrically isolated memory and logic sections
摘要 According to this invention, there is disclosed a semiconductor device in which a memory section and a logic section are arranged on the same semiconductor chip, comprising a high-resistance element constituting a memory cell, a low-resistance line connected to the high-resistance element, a power source line serving as a power source path from a power source pad, a switching element arranged between the low-resistance line and the power source line, and a control circuit for controlling the switching element.
申请公布号 US5355331(A) 申请公布日期 1994.10.11
申请号 US19940185169 申请日期 1994.01.24
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TAKASE, SHINSUKE;KATO, TOSHIYA
分类号 G11C11/41;G11C5/14;G11C11/413;G11C11/417;G11C29/02;H01L21/66;H01L21/8244;H01L27/11;(IPC1-7):G11C7/00 主分类号 G11C11/41
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