发明名称 |
Diamond shaped gate mesh for cellular MOS transistor array |
摘要 |
A cellular transistor structure is disclosed which incorporates a polysilicon gate mesh. In one embodiment, the silicon under the polysilicon is of an N-type while the exposed area not covered by the polysilicon is doped with a P dopant to form P-type source and drain regions. Metal strips are used to contact the rows of source and drain cells. By forming the openings in the polysilicon mesh to be in a diamond shape (i.e., having a long diagonal and a short diagonal), the source and drain metal strips, arranged in the direction of the short diagonals, can be made wider and shorter, thus reducing the on-resistance of the transistor without increasing the area of the transistor. |
申请公布号 |
US5355008(A) |
申请公布日期 |
1994.10.11 |
申请号 |
US19930155029 |
申请日期 |
1993.11.19 |
申请人 |
MICREL, INC. |
发明人 |
MOYER, JAMES C.;ALTER, MARTIN J.;LITFIN, HELMUTH R. |
分类号 |
H01L23/482;H01L29/06;H01L29/08;H01L29/417;H01L29/423;H01L29/78;(IPC1-7):H01L29/10;H01L23/48 |
主分类号 |
H01L23/482 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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