Capacitive memory having a PN junction writing and tunneling through an insulator of a charge holding electrode

摘要

A semiconductor memory device whose data hold condition is not affected due to degradation of transistor characteristics by minimizing leakage charges and the switching transistor size. The semiconductor memory device employs memory cell charge holding electrode that is insulated from the remaining memory cell structure, particularly the switching transistor source drain leakage path. The write element controls the tunneling of charge carriers through such insulator to the charge holding portion or capacitor electrode, for writing data. Particularly, the write element includes a PN junction for various advantages.