发明名称 Monolithically integrated semiconductor structure and method of fabricating such structure
摘要 A heterostructure device includes a ridge-waveguide laser monolithically integrated with a ridge-waveguide rear facet monitor (RFM). An integral V-groove etched directly into the device substrate enables passive alignment of an optical fiber to the active region of the laser. The laser and RFM facets were formed using an in-situ multistep reactive ion etch process.
申请公布号 US5355386(A) 申请公布日期 1994.10.11
申请号 US19920977596 申请日期 1992.11.17
申请人 GTE LABORATORIES INCORPORATED 发明人 ROTHMAN, MARK A.;SHIEH, CHAN-LONG;ARMIENTO, CRAIG A.;THOMPSON, JOHN A.;NEGRI, ALFRED J.
分类号 G02B6/30;G02B6/36;G02B6/42;H01S5/00;H01S5/02;H01S5/026;H01S5/40;(IPC1-7):G02B6/30;H01S3/25 主分类号 G02B6/30
代理机构 代理人
主权项
地址