发明名称 |
NEW ONIUM SALT AND POSITIVE TYPE PHOTORESIST MATERIAL USING THE SAME |
摘要 |
PURPOSE:To provide a new compound which is useful as a fine processing positive type resist material which has high sensitivity to far ultraviolet rays, electron rays and X-rays and has optically high resolution. CONSTITUTION:A salt of the formula: (R)3S<+>M (Rs are aromatic groups; at least one of Rs is t-alkoxy-substituted phenyl; M is anion for the sulfonium). Preferably a salt of formula I (R1 is tertiary lower alkyl; R2 is lower alkyl, alkoxy), for example, p-t-butoxytriphenylsulfonium triflate. The salt of formula I is obtained by cooling a solution of diphenyl sulfoxide in methylene chloride, pouring trimethylsilyl triflate to the cooled solution, heat-treating and stirring the mixture and adding a Grignard reagent prepared from p-t- butoxybromobenzene to effect reaction. |
申请公布号 |
JPH06287174(A) |
申请公布日期 |
1994.10.11 |
申请号 |
JP19930242101 |
申请日期 |
1993.09.02 |
申请人 |
SHIN ETSU CHEM CO LTD;NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
YAGIHASHI FUJIO;FURUHATA TOMOYOSHI;WATANABE ATSUSHI;TANAKA HARUYORI;KAWAI YOSHIO;MATSUDA KOREHITO |
分类号 |
C07C381/12;C08K5/36;C08L25/00;C08L25/18;G03F7/004;G03F7/029;G03F7/039;H01L21/027;H01L21/30;(IPC1-7):C07C381/12 |
主分类号 |
C07C381/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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