发明名称 |
Semiconductor device |
摘要 |
A semiconductor device is an SOI type field effect transistor in which an active region is isolated and insulated by a transistor for isolation. A contact hole for isolation is formed in a gate dielectric thin film for isolation between a gate electrode of the transistor for isolation and a channel region below the gate electrode. In the semiconductor device thus structured, surplus carriers produced in a channel region below a transfer gate electrode are drawn through channel region and isolation contact hole into isolation gate electrode, thereby preventing such a disadvantageous phenomenon as a kink effect or the like due to a floating-substrate effect.
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申请公布号 |
US5355012(A) |
申请公布日期 |
1994.10.11 |
申请号 |
US19930052858 |
申请日期 |
1993.04.28 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
YAMAGUCHI, YASUO;AJIKA, NATSUO;YAMANO, TSUYOSHI |
分类号 |
H01L21/8238;H01L27/092;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L29/78;H01L33/00 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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