发明名称 Semiconductor device
摘要 A semiconductor device is an SOI type field effect transistor in which an active region is isolated and insulated by a transistor for isolation. A contact hole for isolation is formed in a gate dielectric thin film for isolation between a gate electrode of the transistor for isolation and a channel region below the gate electrode. In the semiconductor device thus structured, surplus carriers produced in a channel region below a transfer gate electrode are drawn through channel region and isolation contact hole into isolation gate electrode, thereby preventing such a disadvantageous phenomenon as a kink effect or the like due to a floating-substrate effect.
申请公布号 US5355012(A) 申请公布日期 1994.10.11
申请号 US19930052858 申请日期 1993.04.28
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 YAMAGUCHI, YASUO;AJIKA, NATSUO;YAMANO, TSUYOSHI
分类号 H01L21/8238;H01L27/092;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L29/78;H01L33/00 主分类号 H01L21/8238
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