发明名称 STACK GAS TREATING DEVICE
摘要 <p>PURPOSE:To increase the density of electrons, to increase the uniformity of main discharge and to make harmless nitrogen oxide 10 a large volume of stack gas by feeding electrons to the discharge field by a spark discharge due to a pin gap arc between a UV pin and a plasma electrode to perform the preliminary ionization of the stack gas. CONSTITUTION:In a stack gas treating device, since high voltage pulses of several tens of kV are applied to a plasma positive electrode 42 though a thyratron 58, a charging condenser 60 and a discharging condenser 56, a spark discharge is caused between the UV pin 62 and the negative electrode 44 to discharge electrons to a discharge plate. Next, a high density pulse glow discharge is caused in the main discharge field using the formed electricity as the nucleus to form plasma of electron density equal to that of a high voltage arc. Waste gas components are excited by this energy to make nitrogen oxide harmless. Further, preliminary ionization due to a pin gap arc is caused by the UV pin, allowing the electron density to be increased by the preliminary ionization action.</p>
申请公布号 JPH06285330(A) 申请公布日期 1994.10.11
申请号 JP19930097095 申请日期 1993.03.31
申请人 MITSUI ENG & SHIPBUILD CO LTD 发明人 ISOGAI KAZUHIRO;WATABE SHUNTARO
分类号 B01D53/56;B01D53/32;B01D53/34;B01D53/74;F01N3/08;(IPC1-7):B01D53/34 主分类号 B01D53/56
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