发明名称 |
Stacked-type semiconductor device |
摘要 |
In a method of manufacturing a stacked-type semiconductor device, firstly, a first semiconductor substrate having a first device formed thereon is covered with an interlayer insulating layer and a planarized polycrystalline silicon layer is formed on the interlayer insulating layer. The first semiconductor substrate and a second semiconductor substrate are joined together by putting the surface of the polycrystalline silicon layer in close contact with the surface of a refractory metal layer formed on the second semiconductor substrate, applying thermal treatment at 700 DEG C. or below and changing the refractory metal layer to silicide.
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申请公布号 |
US5355022(A) |
申请公布日期 |
1994.10.11 |
申请号 |
US19920936390 |
申请日期 |
1992.08.28 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
SUGAHARA, KAZUYUKI;AJIKA, NATSUO;OGAWA, TOSHIAKI;IWAMATSU, TOSHIAKI;IPPOSHI, TAKASHI |
分类号 |
H01L27/00;H01L21/02;H01L21/20;H01L21/762;H01L21/822;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L27/02;H01L23/48 |
主分类号 |
H01L27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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