| 摘要 |
<p>PURPOSE:To enable sufficient pre-cooling and attaching/detaching of a wafer, by operating a single-electrode system electrostatic attraction mechanism, independently of the existence of main plasma in a plasma chamber. CONSTITUTION:An insulating cylinder which penetrates a dielectric block 1 containing an inner electrode 2 and has an aperture on a wafer mounting surface 1a is installed, in which gas like He for generating auxiliary plasma is introduced. Auxiliary plasma P1 is generated between the rear of a wafer W and an auxiliary electrode 9 buit in the insulating cylinder 8 by applying RF power to the auxiliary electrode 9. Via the auxiliary plasma P1, charge storage from the earth to the wafer W (arrow D1) or discharge of residual charge from the wafer W to the earth is performed. Differently from the conventional single- electrode system electrostatic attraction mechanism, the facing earth can be constituted when main plasma is not present, so that the anisotropic figure of a pattern which has been formed on the wafer W surface is not deteriorated and the substratum selectivity is not decreased.</p> |
