| 摘要 |
PURPOSE:To uniform the etching rate for forming through holes, by arranging a plurality of viaholes along the periphery of an electrode part which viaholes are formed in an interlayer insulating film between electrode parts of large area. CONSTITUTION:The monitor part of a semiconductor integrated circuit is formed on the interlayer insulating film 3 covering an electrode part 2 of a first layer metal wiring formed on a semiconductor substrate 1. Along four sides of the electrode part 2, twelve viaholes 6 of almost the same dimensions as those of the fine viaholes for connecting circuit wiring patterns are formed. A second layer metal wiring electrode part 5 of almost the same size as the first metal wiring electrode part 2 is brought into contact in the viaholes 6 with the electrode part 2. Hence the viaholes 6 can be formed at almost the same etching rate as the via holes on the circuit wiring patterns, so that working of high precision is enabled. The multilayered electrode of the main part of an integrated circuit can be realized, and the increase of chip area can be prevented. |
