| 摘要 |
<p>PURPOSE:To provide the process for production of the edge stressing type phase shift mask which is simplified in production process by executing patterning of a metallic light shielding film and patterning of a phase shift layer held housed in a drying etching device. CONSTITUTION:An etching stopper layer 2, a silicon oxide thin film 3 and a metallic chromium thin film 4 are successively formed on a glass substrate 1 and an electron beam resist 5 is applied thereon and is subjected to electron beam plotting and developing, by which the electron beam pattern thinner in the film thickness at the end than in the central part is obtd. In succession, the metallic chromium thin film 4 and the silicon oxide thin film 3 are dry etched within the etching device and the film thickness of the electron beam resist is uniformly decreased to expose the metallic chromium thin film 4 at the end thereof. The exposed part 4a is dry etched again. Since a series of the stages are executed within the etching device, the stages are extremely simplified.</p> |
