| 摘要 |
PURPOSE:To work a connection part and an isolation part with good accuracy and to easily obtain the optimum condition of a throughhole contact by a method wherein an insulating resin layer is irradiated with a short-wavelength pulsed laser, the insulating resin layer in the connection part is removed and a first back electrode is exposed. CONSTITUTION:A transparent electrode 3 is formed on a glass substrate 2 so as to keep a prescribed interval. In addition, a semiconductor layer 4 composed of amorphous silicon or the like and a first back electrode 5 composed of ITO-Ag'-Ti or the like are formed over the whole face on the glass substrate 2. Then, a through hole 9 which is used to connect a second back electrode to the transparent electrode 3 is formed. An insulating layer 6 composed of an organic polymer resin such as a polyimide or the like is formed over the whole face on the surface of the glass substrate 2. The inner circumferential face of the through hole 3 is insulated by the insulating resin layer 6. Then, a CeC excimer laser beam EB is irradiated, and the insulating resin layer in a connection part 9 is removed. Thereby, the connection part 9 can be worked without damaging the lower layer of the insulating resin layer 6. |
