| 摘要 |
PURPOSE:To form amorphous silicon film of a small optical gap by plasma CVD in which the source gas for amorphous silicon is heated before it is introduced into a plasma region. CONSTITUTION:Wafers 20 are placed on a holder 14 in a chamber 12, and the temperature of the wafers is controlled by a heater 16. Above the holder 14, a heater 22 is provided, and heated source gas is introduced through an entrance 22a to a plasma region 26. The source gas is thermally energized to vibrate and rotate so that the reaction at the surface of the wafer is accelerated during the formation of amorphous silicon. Therefore, amorphous silicon film I of a low optical gap can be formed at a relatively low substrate temperature. |
