| 摘要 |
PURPOSE:To form a large number of uniform structure in nanometer size exceeding the low throughput properties of a beam lithographic method represented by an electron beam lithographic method in the formation of fine structure. CONSTITUTION:An InAs layer 107 is grown at a step up to the half of terrace width from the end of a linear molecular layer step 106 on a GaAs substrate 101 inclined in the specific direction from a certain face azimuth. Dry etching by shower-shaped electron beams 109 is conducted in the atmosphere of chlorine gas 108 while using the InAs layer as a mask, thus performing the fine machining of structure previously formed in the substrate. |
