发明名称 |
OPTICAL WAVEGUIDE CRYSTAL AND ITS PRODUCTION |
摘要 |
PURPOSE:To make it possible to utilize the optical waveguide crystal as a small-sized wavelength-variable laser having high laser oscillation efficiency and optical amplifier element by forming a damage layer by ion implantation and forming two-dimensional or three-dimensional optical waveguide. CONSTITUTION:A Ti-doped sapphire singe crystal is used as a substrate and ions are implanted into this Ti-doped sapphire singe crystal, i.e., He<+> ions or B<+> ions are implanted to the surface of the single crystal by changing incident energy at >=1MeV, thereby, a damage layer of a small refractive index is formed in the part of a certain depth from the crystal surface and light is confined in the layer part held between the damage layer and the extreme surface layer. Namely, the crystal is a crystal on which the two-dimensional or three-dimensional optical waveguide is formed by the ion implantation. The implantation quantity is 10<16> to 10<18>ions/cm<2> when the species of the ions to be injected are He<+> ions. The implantation quantity is 10<15> to 10<18>ions/cm<2> when the species of the ions to be injected are B<+> ions. |
申请公布号 |
JPH06281832(A) |
申请公布日期 |
1994.10.07 |
申请号 |
JP19930092329 |
申请日期 |
1993.03.26 |
申请人 |
AGENCY OF IND SCIENCE & TECHNOL;TOSOH CORP |
发明人 |
HORINO YUJI;FUJII KANESHIGE;KODAMA NOBUHIRO;HARA SHINICHI |
分类号 |
C30B29/20;C30B31/22;G02B6/12;G02B6/122;H01S3/06;(IPC1-7):G02B6/12 |
主分类号 |
C30B29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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