发明名称 EDGE SEAL AND MANUFACTURING METHOD OF A SEMICONDUCTOR CHIP
摘要 The edge seal includes two separate layers of metal one (42) of which overlays the other (32) in electrical contact. One (32) of the metal layers is in ohmic contact with a highly doped region (30) formed in the planar surface (18) of the semiconductor body (12). The two metal layers serve as an electrical conductor to distribute power to various portions of the integrated circuit contained in the chip and electrically charge the highly doped region to prevent migration of ions into the active areas of the integrated circuits. <IMAGE>
申请公布号 KR940009351(B1) 申请公布日期 1994.10.07
申请号 KR19850008962 申请日期 1985.11.30
申请人 RCA CORP. 发明人 DWYER, ROBERT A.
分类号 H01L23/52;H01L21/31;H01L21/3205;H01L23/28;H01L23/485;H01L23/528;(IPC1-7):H01L27/04 主分类号 H01L23/52
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