| 摘要 |
PURPOSE:To enhance the conversion efficiency of a photovoltaic element by reducing the defect density of an amorphous silicon germanium layer. CONSTITUTION:The content of microcrystalline silicon in an amorphous silicon germanium layer for a photoactive layer 3i is set at 5 to 4% of the total amount of silicon, the amount of germanium is set at 5 to 30% with reference to the total amount of silicon, and oxygen is set at 5 to 20% with reference to the total amount of silicon. |
