| 摘要 |
PURPOSE:To give a large surface area to a semiconductor storage device without fluctuation by forming a laminated charge storage electrode on a semiconductor substrate and uniformly applying monodisperse particles to the surface of the electrode, and then, performing anisotropic etching by using the applied particles as a mask. CONSTITUTION:After forming an element for switching on a semiconductor substrate 1, a polysilicon layer 3 which becomes a laminated charge storage electrode 9 connected to one electrode of the element for switching is formed. Then monodisperse particles 4 having grain sizes of <=0.2mum are uniformly applied to the surface of the layer 3. After applying the particles 4, the electrode 9 having columnar recessing and projecting sections 8 or its surface is formed by performing anisotropic etching on the layer 3 by using the particles 4 as a mask. Since the surface area of the electrode 9 can be increased by forming the columnar recessing and projecting sections on the surface of the electrode 9 in such a way, the capacity of the electrode 9 can be increased. Since the particles 4 are used as a mask, in addition, an charge storage electrode the shape of which can be easily controlled and the capacity of which does not fluctuate much can be obtained. |
