| 摘要 |
PURPOSE:To reduce the thickness of a dielectric film as much as possible and, at the same time, to reduce the occurrence of leakage currents by further nitriding a silicon nitride film after forming the film. CONSTITUTION:A silicon nitride film 9 is formed on a polycrystalline silicon film 8 by, for example, the vapor growth method. When the film 9 is formed by the vapor growth method, it sometimes occurs that parts of the film 9 become defective and incompletely nitrided parts are left in the film 9. Therefore, the film 9 is further nitrided into a silicon nitride film 9' in, for example, an ammonia atmosphere. Therefore, the defective parts generated when the film 9 is formed are nearly completely nitrided. Then a dielectric film 10 is formed by oxidizing the surface of the film 9' by heat-treating the film 9' in, for example, steam. |
