| 摘要 |
<p>PURPOSE:To lessen the area of an electrode and cut down the cost by so counterposing the pad part on the long side of an electrode for signal detection as to engage with the pointed end of the connection of a resistance extending on the short side of the electrode adjoining each other. CONSTITUTION:The mask of an oxide film is formed on a rectangular n-type semiconductor substrate 1, and an n<+>-type channel stopper 4, at the periphery of the surface of a chip, and an n-type impurity diffused layer, at the rear, are formed at the same time. Next, an oxide film is formed, and resistors 2 are formed between each of a plurality of electrodes and the next by diffusing p-type impurities by ion implantation. P-type diffused layers 2-1 are formed at both ends of each resistor 2. Next, the oxide film of an electrode is removed, and a cathode electrode 5 an anode electrode 3 for signal detection are formed by Al deposition. The section 3-1 on short side is connected to the p-type diffused layer 2-1, and the pad part 3-2 on long side are so counterposed as to engage with the pointed end of the section 3-2 on the short side of anode electrodes 3 adjoining each other within a light receiving part. Hereby, the electrode can be shortened.</p> |
