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发明名称
GROWING METHOD FOR SINGLE CRYSTAL OF P-TYPE GaAs BY Zn-DOPING
摘要
申请公布号
KR1019940009282(B1)
申请公布日期
1994.10.06
申请号
KR1019910000210
申请日期
1991.01.09
申请人
发明人
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主分类号
代理机构
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