| 发明名称 |
Radiation-hardenable metal naphthenate |
| 摘要 |
<p>A radiation-hardenable metal naphthenate is disclosed which is used to form a metal oxide thin-film circuit, and which is characterised in that this metal naphthenate is prepared from a naphthenic acid which contains less than 5% by weight of natural or unsaponifiable components. According to the present invention, it is possible to obtain a metal oxide thin-film circuit on the submicron scale which has good electrical properties, from metal naphthenate in a simple manner without the use of an expensive, complex device.</p> |
| 申请公布号 |
DE4408236(A1) |
申请公布日期 |
1994.10.06 |
| 申请号 |
DE19944408236 |
申请日期 |
1994.03.11 |
| 申请人 |
SHINTO PAINT CO. LTD., AMAGASAKI, HYOGO, JP |
发明人 |
TAKATANI, KAZUKI, SANDA, HYOGO, JP |
| 分类号 |
C09D5/00;C07C61/00;C09D11/00;C09D11/52;C09D195/00;G03F7/004;H01L23/498;H01L39/06;H01L39/24;H05K1/09;H05K3/10;(IPC1-7):H01L21/320;H01L21/90;C07C53/00;H05K1/03 |
主分类号 |
C09D5/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
