| 摘要 |
<p>PURPOSE:To prevent an error in writing due to noise of various devices and the static electricity of a human body by providing a writing circuit with voltage limiting elements and current limiting elements. CONSTITUTION:A necessary number of nonvolatile memories 201 and 202 are arranged in the same structure, and voltage limiting elements 203 and 204 are arranged in parallel to a terminal VSS or VPP to limit a high voltage which exceeds a necessary write voltage or a necessary erasure voltage when the high voltage is applied. Further, current limiting elements 205 and 206 are arranged between the memories in series. Consequently, an error in writing and an error in erasure are prevented.</p> |
