| 摘要 |
<p>A semiconductor radiation image detector consists of a semiconductor base (1) having its one surface plated with a common bias electrode (2) and its other surface plated with a plurality of two-dimensionally arrayed pixel-corresponding signal-takeout electrodes (3). The signal takeout electrodes (3) are provided with respective signal lead-out bumps (4). These bumps (4) are connected by a flip-chip joining technique with corresponding pads (6) provided on one side of a separately prepared base plate (5). The signal takeout electrodes (3) are thus free from many intertwining lead wires, making the detector free from problems caused by short-circuits forming across lead wires. The detector receives a radiation image with the common bias electrode (2) directed to incident radiation rays, resulting in an increase in the image detection efficiency. In manufacturing this radiation image detector, photoprocessing and metal-plating techniques are used.</p> |
