| 摘要 |
PURPOSE:To utilize a thin film for gate on an n-type Si lamination electrode for a dielectric having a static capacitance by providing an n-type Si and metallic lamination electrode or lead on a field insulation film while a p-type Si and metallic insulation gate electrode on a gate film. CONSTITUTION:A field oxidation film is buried on a p-type Si substrate surface and n<+>Si is laminated to be covered with Pt. An n<+>Si made electrode or leads 4 and 5 are formed on the buried layer by selective etching. Next, an SiO2 6, Si3N4 7 and SiO2 8 are laminated to prevent a charge transfer between the gate film and Si3N4. Next, a p<+>Si and Mo 10 are laminated to form a capacity portion 19 and gate portion 15 by selective etching. The n<+>layers 13 and 14 are formed by heat diffusion from an opening being covered with SiO2 16 to form an Al electrode by selective opening. According to such a method, a MISFET and static capacity can be formed on a same substrate together and a device with a small size and high speed possibility can be obtained. |
