| 摘要 |
A thin-film transistor includes a gate electrode and a semiconductor film consisting of amorphous silicon, formed on an insulating substrate to oppose each other through a gate insulating film, ohmic contact layers composed of n-type amorphous silicon doped with an impurity, electrically insulated from each other on the semiconductor film, and electrically connected to the semiconductor film, and source and drain electrodes arranged on the semiconductor film with a predetermined gap to form a channel portion, and electrically connected to the semiconductor film through the ohmic contact layers. The gate electrode and a portion surrounding the gate electrode are entirely formed into a continuous metal oxide film by a chemical reaction.
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