发明名称 Method for the chemical vapor deposition of group IB and group VIIIB metal barrier layers
摘要 A method for applying a metal film barrier layer between a substrate and a superconductor coating or over a superconductivity coating using chemical vapor deposition in which low vapor pressure reactants are used, is disclosed, which comprises the steps of providing a substrate and a quantity of metal-bearing reagent and one or more reagents, placing the substrate within the furnace, introducing the metal-bearing reagent by a powder feeder means and then the reagents at different times into and reacting them in the furnace, resulting in the deposition first of a coating of metal onto the substrate and then of a coating consisting essentially of the superconducting reactant components onto the metal film; said reagents generally chosen to yield the group of oxide superconductors.
申请公布号 US5352656(A) 申请公布日期 1994.10.04
申请号 US19920852813 申请日期 1992.03.17
申请人 GEORGIA TECH RESEARCH CORPORATION 发明人 LACKEY, WALTER J.;HANIGOFSKY, JOHN A.;HILL, DAVID N.;SHAPIRO, MICHAEL J.;BAREFIELD, E. KENT;CARTER, WILLIAM B.
分类号 C23C16/30;B05D7/24;C23C16/40;C23C16/44;C23C16/448;H01L39/24;(IPC1-7):B05D5/12;C23C16/00 主分类号 C23C16/30
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