| 摘要 |
A self-aligned thin-film ceramic oxide stacked capacitor on an underlying semiconductor substrate using a spin-on ceramic oxide fabricated by forming conductive pillars and the lower electrode, forming a temporary layer, building up the semiconductor substrate around the temporary layer, removing the temporary layer, and then spinning on the ceramic oxide. This results in a ceramic oxide stacked capacitor with the conformal thin-film ceramic oxide encapsulated by the top electrode.
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