发明名称 Non-volatile semiconductor memory device
摘要 A non-volatile semiconductor device includes a bus line; a plurality of bit lines coupled to the bus line; a cell transistor, connected between each of the bit lines and a word line, for storing electrical information; an output circuit, coupled to the bus line, for outputting a signal corresponding to the electrical information stored in the cell transistor under a condition in which the bus line has been charged to a predetermined voltage level; a constant voltage circuit coupled to the bus line, the constant voltage circuit generating a voltage having an approximately constant level when a current flows through the constant voltage circuit; and a current supply circuit, coupled to the bus line, for supplying a current to the constant voltage circuit via the bus line in accordance with a control signal supplied from an external unit, whereby the bus line is charged to a predetermined voltage level by the voltage generated by the constant voltage circuit.
申请公布号 US5353249(A) 申请公布日期 1994.10.04
申请号 US19930010434 申请日期 1993.01.28
申请人 FUJITSU LIMITED 发明人 ITANO, KIYOSHI
分类号 G11C17/00;G11C7/10;G11C16/06;G11C16/24;G11C16/26;G11C16/28;(IPC1-7):G11C7/00;G11C11/40 主分类号 G11C17/00
代理机构 代理人
主权项
地址