发明名称 BOOSTING COMPENSATION CIRCUIT OF THE SEMICONDUCTOR MEMORY DEVICE
摘要 The compensation circuit in the semiconductor providing the stable operating voltage comprises the input stage (100A) receiving the enable signal; the voltage pre-charger (400) connected to the output of the input stage (100A); the bootstrap stage (500) increasing the output voltage of the voltage pre-charger (400); the control means (600) adjusting the output voltage of the circuit (M7).
申请公布号 KR940009249(B1) 申请公布日期 1994.10.01
申请号 KR19910020137 申请日期 1991.11.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, CHAN - SOK;CHOE, DO - CHAN
分类号 G11C11/407;(IPC1-7):G11C11/407 主分类号 G11C11/407
代理机构 代理人
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