发明名称 |
BOOSTING COMPENSATION CIRCUIT OF THE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
The compensation circuit in the semiconductor providing the stable operating voltage comprises the input stage (100A) receiving the enable signal; the voltage pre-charger (400) connected to the output of the input stage (100A); the bootstrap stage (500) increasing the output voltage of the voltage pre-charger (400); the control means (600) adjusting the output voltage of the circuit (M7).
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申请公布号 |
KR940009249(B1) |
申请公布日期 |
1994.10.01 |
申请号 |
KR19910020137 |
申请日期 |
1991.11.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, CHAN - SOK;CHOE, DO - CHAN |
分类号 |
G11C11/407;(IPC1-7):G11C11/407 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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