| 摘要 |
<p>PURPOSE:To realize TFTs which have semiconductor films having high film quality and are miniaturized and to provide the display substrate on which the TFTs having high reliability are mounted at a high density. CONSTITUTION:The semiconductor films 8 in the contact parts of the TFTs are formed by bringing the gaseous material to be run on the front surface side of a substrate 1 into reaction by photoexcitation and deposing a-Si thin films or fine crystalline silicon thin film. The substrate 1 is irradiated with UV light 52 from the rear side thereof with gate electrode 3 as light shielding mask at this time and, therefore, the silicon thin film is deposited only in the light transparent part on the substrate 1 and along the inner side of the edge of the gate electrode 3. As a result, gap pattern 13 between source and drain electrodes is formed in a self-matching manner at the time of deposition of the silicon thin film without using a photodeteching process and mispositioning hardly arises. The gate insulating film 5, the semiconductor film 6 of the channel part, the semiconductor film 8 of the contact part and protective insulating film of the channel part are continuously deposited and, therefore, the semiconductor film 6 of the channel part is not exposed to the atm. at the time of photoetching in pattern formation. The contamination of the boundaries and the deterioration in film quality are thus obviated.</p> |
