| 摘要 |
PURPOSE:To control the size and shape of a wire by a method wherein a second semiconductor of the same composition as that of a first semiconductor is buried in (110) facet plane, (11bar0) facet plane and the surface of the second semiconductors. CONSTITUTION:Mesa stripes 12 extending in [001] direction are formed on the (100) plane of a GaAs substrate 11. Next, Al1--zGaxAs(0<=x<1) levers 17 are grown on GaAs layers 13. There layers 17 are also grown on (110) facet 14 and (11bar0) facet 15 likewise on the (100) plane. Successively, when the GaAs layers 13 are grown again, the other GaAs layers 18 are grown only on the (100) surface. Finally, when the other Al1-xGaxAs(0<=x<1) layers 19 are grown, the peripheries of the GaAs layers 18 on the mesa stripes 12 are encircled by these layers 17 and 18 to be quantum fine wire structured. |
