| 摘要 |
<p>PURPOSE:To obtain a non-volatile memory which surely clamps by controlling so that high voltage impressed to a word line does not exceed an appropriate value, in a non-volatile memory requiring high voltage at the time of erasing and rewriting data. CONSTITUTION:Clamp elements 10a which restrict voltage with the prescribed voltage value are respectively provided between row Vpp switches 2a of each word line WL and memory cell arrays 3, and the degradation of characteristics and breakdown of selecting transistors 31, 32 caused by over boosting of word lines WL are prevented from occurring. Further, an occupancy area of a clamp element 10a is formed so as to be reduced in a memory constituted with MOS elements.</p> |
