| 摘要 |
<p>PURPOSE:To provide a nonvolatile semiconductor memory element capable of optionaly setting an erasure area. CONSTITUTION:This element is provided with a storage means 1 being a memory cell array storing information, a read/write means reading/writing the information for the storage means 1 and an erasure means 3 performing the en bloc erasure of the stored information in the storage means 1 and the erasure in block in a prescribed fixed area. In the storage means 1, plural cells are arranged in rows and columns, and the erasure means 31 is a data erasure method in the nonvolatile semiconductor memory element making one or plural rows a block unit, and an input instruction incorporating a block position, the erasure area in the block and the erasure instruction for the area are received, and the erasure is performed while deterring the erasure in the erasure means 31 at every the column in the means 1 according to the erasure area in the received block.</p> |
