| 摘要 |
<p>PURPOSE:To improve gate breakdown voltage by providing a first insulation film at a gate region or a side-wall part of an island-shaped region consisting of non-monocrystalline silicon film and further a second insulation film on the gate electrode or the non-monocrystalline silicon film as a gate insulation film. CONSTITUTION:An island-shaped region 21 consisting of p-Si film in island shape is laid out on a transparent glass substrate 11 and a first insulation film 23 with an equivalent film thickness as that of an island region 21 is installed so that a side-wall surface 21a is covered completely. Then, a second insulation film 24 operating as a gate insulation film is laid out so that the island-shaped region 21 and the first insulation film 23 may be covered and then a gate electrode 25 is laid out on it, thus obtaining a thin-film transistor with a drastically improved gate breakdown voltage even if the film thickness of the gate insulation film is thin.</p> |
