| 摘要 |
<p>PURPOSE: To provide a selective etching method and a chemical mechanical planarization method for the purpose of forming a self-aligned gate structure and a focusing ring around a pointed end of an electron emitter used for a field emission display. CONSTITUTION: (i) An end 13 of an electron emitter is pointed by oxidation when occasion demands, and (ii) a primary insulation layer 18 is accumulated, and (iii) a conduction layer 15 is accumulated, and (iv) a secondary insulation layer 14 is accumulated, (v) a focusing electrode ring layer 19 is accumulated, and (vi) a buffer material is accumulated when occasion demands, and (vii) a part of the secondary insulation layer 14 is exposed by being made flat with a process for a chemical mechanical planarization(CMP), and (viii) a self-aligned gate and a focusing ring 19 are formed by etching and accordingly the pointed end 13 of the emitter is exposed, and then (ix) the pointed end 13 of the emitter is covered with a material having a low work function.</p> |
