发明名称 MANUFACTURE OF LEAD FRAME OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To reduce power supply switching noise and to improve heat dissipation property even in case of narrow pitch and multi-pitch of a lead frame by providing a power supply layer whose width is enlarged in addition to a signal layer, by using a heat sink of high heat conduction rate for an island and by laminating each of the layers including the signal layer through an insulation sheet. CONSTITUTION:A power supply layer 13 whose width is enlarged is provided in addition to a signal layer to reduce influence of power supply switching noise to a signal layer. Heat dissipation property can be improved by adopting heat sink 4 such as aluminum and copper of high heat conductivity as an island. A semiconductor device having a thinned lead frame can be manufactured even if it is a lamination by setting each thickness of a signal layer, a power supply layer 3, a heat sink 4 and a polyimide sheet 5 within a thickness of an outer lead 7.</p>
申请公布号 JPH06275765(A) 申请公布日期 1994.09.30
申请号 JP19930061900 申请日期 1993.03.22
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 INOUE HIDEFUMI;NOJIMA MASAHARU
分类号 H01L23/50;(IPC1-7):H01L23/50 主分类号 H01L23/50
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