| 摘要 |
PURPOSE:To simultaneous satisfy total reflection conditions and Bragg's conditions by selecting the characteristic X-rays appropriately regardless of the accuracy in the crystal orientation of Si. CONSTITUTION:A plurality of types of characteristic X-rays chi0 are outputted from an X-ray source 2 and one type chi1 selected by a monochrometer 3 impinges on a sample (s). Intensity of total reflected X-ray chi2 is measured by means of a counter 5 and a diffracted X-ray chi3 is measured by means of a counter 6. A controller 8 takes in these measurement data and uses them in the evaluation processing. A stage 1 is rotary driven to alter the crystal orientation of the sample (s). Various targets, including a mosaic target, a target assembly, a partially plated target, an alloy target, a target grown in vapor phase, can be employed as the cathode of X-ray tube. |
