| 摘要 |
PURPOSE:To provide a Schottky diode which can improve its mobility and operating frequency. CONSTITUTION:The impurity concentration and Miller indices of the crystal surface of an n<+>-GaAs substrate 1 are 1X10<18>cm-3 and (011), respectively. An n-GaAs operating layer 2 is formed on the substrate 1 by epitaxial growth. The impurity concentration and Miller indires of the crystal surface of the layer 2 are 1X10<17>cm<-3> and (011) plane, respectively. On the surface of the layer 2, a discoid Schottky electrode 3 is formed as a Schottky barrier. On the other hand, an ohmic electrode 4 is formed on the entire lower surface of the substrate 1 for forming an ohmic junction. |
