GROWTH METHOD OF II-VI COMPOUND SEMICONDUCTOR

摘要

PURPOSE:To arbitrary set the p-type conductivity of a II-IV compound semiconductor in a well controllable state at the time of growing the semiconductor by using a dopant material containing nitrogen atoms by mixing the dopant material containing nitrogen atoms with a specific gas and adding the mixed gas after activation. CONSTITUTION:A dopant material containing nitrogen atoms and a group 0 element gas respectively contained in exclusively used cylinders 8 and 9 are supplied to an activating device 7 after the material and gas are mixed with each other after their flow rates are adjusted by means of flow rate adjusting devices 10. Light, high frequencies, etc., are used as the activating means of the mixed gas. In addition, an extremely high value of effective acceptor concentration can be obtained when the mole ratio between the dopant material containing nitrogen atoms and the group 0 element gas and the power supplied to the activating device 7 are suitably selected. When the mixing ratio of the group 0 element gas in the mixed gas increases, the effective acceptor concentration drops.