| 摘要 |
PURPOSE:To align the alignment pattern of a mark to alignment pattern formed on respective base material layers, for minimum miss-alignment amount. CONSTITUTION:Displacement positions A and B of alignment patterns 11 and 21 formed on multiple base material layers are detected, and based on the A and B which a objectives of alignment, the position of virtual alignment pattern 41 is decided. Then, the virtual alignment pattern 41 is alined with a mark alignment pattern 31. Otherwise, the position of the virtual alignment pattern 41 may be decided based on respective detected displacement positions A and B of alignment patterns 11 and 21 multiplied by weighting factors kappaA and kappaB. |
