| 发明名称 |
ETCHING PROCESS AND DEVICE FOR CLEANING SEMICONDUCTOR COMPONENTS, IN PARTICULAR POWER DIODES |
| 摘要 |
Proposed is a plasma-beam etching process for cleaning laterally exposed p-n junctions in semiconductor components, in particular power diodes (16), after welding the semiconductor chips (18) concerned to connector elements (17, 19). The method calls for fluorine compounds to be used as the etching gas. |
| 申请公布号 |
WO9422165(A1) |
申请公布日期 |
1994.09.29 |
| 申请号 |
WO1994DE00246 |
申请日期 |
1994.03.12 |
| 申请人 |
ROBERT BOSCH GMBH;BARTH, STEPHAN-MANUEL |
发明人 |
BARTH, STEPHAN-MANUEL |
| 分类号 |
H01L21/00;H01L21/02;H01L21/302;H01L21/304;H01L21/306;H01L21/3065;H01L21/329;H01L21/78 |
主分类号 |
H01L21/00 |
| 代理机构 |
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