Semiconductor storage cell and method for forming the same

摘要

The invention discloses a semiconductor storage cell and a method for forming the same. A capacitor is arranged under a transistor such that the DRAM cell is suitable for high-density semiconductor devices. The semiconductor device according to the present invention comprises: a buried capacitor which consists of a storage electrode, a dielectric layer and a plate electrode, and which is formed on a substrate in planar form; and a transistor which is formed over the capacitor, the source/drain region of the transistor being connected to the storage electrode of the capacitor.