发明名称 HIGH GAIN, LOW DISTORTION, FASTER SWITCHING TRANSISTOR
摘要 <p>A transistor (16) in which the emitter terminal is coupled to ground through an electrolytic capacitor (26). The electrolytic capacitor (26) has a capacitance of from about 0.2 νf to about 100 νf and can be connected either by itself or in parallel with a resistor (22) depending upon the circuit in which it is used. The incorporation of an electrolytic capacitor of such a capacitance level provides greatly improved gain and less distortion of the input signal, to permit a high output to be achieved in fewer amplifier stages and with less current draw and heating than in conventional transistor amplifier stage circuits. Additionally, the transistor (76) can be provided in a unitary structure by incorporating the electrolytic capacitor (86) directly on the transistor chip (76) and can also be provided by incorporating the transistor (88) and a resistor (92) within the casing (90) of an electrolytic capacitor.</p>
申请公布号 WO1994022215(A1) 申请公布日期 1994.09.29
申请号 US1993002332 申请日期 1993.03.22
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