For a laser diode, a succession of layers of AlGaAsN layers grown on a silicon substrate is proposed. The emission wavelength can be adjusted by choice of the Al content over a wide range. Emission takes place in the visible spectral range. The succession of III-V semiconductor material layers is matched to the lattice of the silicon substrate.
申请公布号
DE4310569(A1)
申请公布日期
1994.09.29
申请号
DE19934310569
申请日期
1993.03.26
申请人
DAIMLER-BENZ AKTIENGESELLSCHAFT, 70567 STUTTGART, DE