Kondensator für ein Halbleiterbauelement und Verfahren zu seiner Herstellung

摘要

First and second material layers having different etching rates (33 and 37, 37b) formed on a source region are partially etched to form a contact hole (39) partially exposing the source region (14). The side portion of the first material layer exposed by the contact hole is partially and isotropically etched to form a "convex space" portion (38). A conductive layer (41) is formed and then patterned so as to form a vase shaped storage electrode (105) (Figure 10, not shown). Then, the remaining first and second material layers are removed, to expose the storage electrode. The storage electrode is formed of a single conductive layer and constituted by a lower portion connected to the source region and a body which extends upwards from the lower portion having a middle portion with at least one convex portion for increasing capacitance. A dielectric film (115) is formed on inner and outer surfaces of the storage electrode and a plate electrode (125) is formed on the dielectric film. The upper, side and bottom surfaces of the storage electrode can be utilized as an effective area of the capacitor. <IMAGE>