Power MOSFET

摘要

High-blocking power MOSFETs have a weakly doped inner zone and therefore a high forward resistance. The forward resistance can, at equal dielectric strength, be reduced by arranging in the inner zone (1), in the region of the space-charge zone, more highly doped zones (12) with the opposite conduction type from that of the inner zone. Between these zones lie zones (11) which have the conduction type of the inner zone but higher doping. When the rated blocking voltage is applied, the charge carriers are moved out of the additional zones of the block. <IMAGE>