| 摘要 |
An E<2>PROM cell includes a substrate (200) of one conductivity type having source and drain regions (210, 212) of an opposite conductivity type disposed along a surface thereof, with a channel region (216) between the source and drain. An oxide layer is formed over the channel region and includes a relatively thick portion over the channel region, and first and second relatively thin portion over respective portions of the source and drain. Programming of the cell is achieved by electrons passing from the floating gate (222) of the device through the thin oxide portion by electrons passing from the drain through the thin oxide portion there over into the floating gate. The cell contains only a single layer of polysilicon, which forms the floating gate. |
